Posts Tagged ‘Molybdenite for electronics’

Molybdenite to challenge graphene?

January 31, 2011
Mineral molybdenite from collection of Nationa...

Mineral molybdenite: Image via Wikipedia

A new paper from researchers at Ecole Polytechnique Federale de Lausanne about a new material which could challenge graphene for transistors.

Single-layer MoS2 transistors, by B. Radisavljevic, A. Radenovic, J. Brivio, V. Giacometti & A. Kis, Nature Nanotechnology (2011) doi:10.1038/nnano.2010.279

Physorg reports:

Smaller and more energy-efficient electronic chips could be made using molybdenite. In an article appearing online January 30 in the journal Nature Nanotechnology, EPFL’s Laboratory of Nanoscale Electronics and Structures (LANES) publishes a study showing that this material has distinct advantages over traditional silicon or graphene for use in electronics applications.

A model showing how molybdenite can be integrated into a transistor. Credit: EPFL

Research carried out in the Laboratory of Nanoscale Electronics and Structures (LANES) has revealed that molybdenite, or MoS2, is a very effective semiconductor. This mineral, which is abundant in nature, is often used as an element in steel alloys or as an additive in lubricants. But it had not yet been extensively studied for use in electronics.

“It’s a two-dimensional material, very thin and easy to use in nanotechnology. It has real potential in the fabrication of very small transistors, light-emitting diodes (LEDs) and solar cells,” says EPFL Professor Andras Kis, whose LANES colleagues M. Radisavljevic, Prof. Radenovic et M. Brivio worked with him on the study. He compares its advantages with two other materials:silicon, currently the primary component used in electronic and computer chips, and graphene, whose discovery in 2004 earned University of Manchester physicists Andre Geim and Konstantin Novoselov the 2010 Nobel Prize in Physics.

One of molybdenite’s advantages is that it is less voluminous than silicon, which is a three-dimensional material. “In a 0.65-nanometer-thick sheet of MoS2, the electrons can move around as easily as in a 2-nanometer-thick sheet of silicon,” explains Kis. “But it’s not currently possible to fabricate a sheet of silicon as thin as a monolayer sheet of MoS2.” Another advantage of molybdenite is that it can be used to make transistors that consume 100,000 times less energy in standby state than traditional silicon transistors. A semi-conductor with a “gap” must be used to turn a transistor on and off, and molybdenite’s 1.8 electron-volt gap is ideal for this purpose.

The existence of this gap in molybdenite also gives it an advantage over graphene.

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